The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2009

Filed:

Jul. 25, 2006
Applicants:

Jade H. Alberkrack, Tempe, AZ (US);

David L. Cave, Tempe, AZ (US);

Thomas Peter Bushey, Mesa, AZ (US);

Robert Alan Brannen, Chandler, AZ (US);

Inventors:

Jade H. Alberkrack, Tempe, AZ (US);

David L. Cave, Tempe, AZ (US);

Thomas Peter Bushey, Mesa, AZ (US);

Robert Alan Brannen, Chandler, AZ (US);

Assignee:

Dolpan Audio, LLC, Dover, DE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01);
U.S. Cl.
CPC ...
Abstract

In accordance with the principles of the invention, an integrated circuit comprises a substrate having a first FET formed on the substrate. The first FET has a first terminal coupleable to a load, a second terminal and a control terminal. The second terminal is connected to the substrate. The substrate comprises a parasitic body diode coupled between the first terminal and the substrate. The body diode is disposed such that it becomes conductive when a reverse voltage across the FET first terminal and the substrate is at least a first diode forward voltage. A voltage detector is formed on the substrate. The voltage detector has a first input coupled to the FET first terminal, a second input coupled to the substrate, and an output coupled to the FET control terminal. The voltage detector is responsive to a reverse voltage level at the FET first terminal that is less than the first diode forward voltage to turn the FET on for the duration of a reverse voltage having at least said reverse voltage level. The parasitic body diode is thereby prevented from injecting current into the substrate.


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