The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2009
Filed:
Jan. 27, 2005
Hyung-suk Jung, Gyeonggi-do, KR;
Jong-ho Lee, Gyeonggi-do, KR;
Hwa-sung Rhee, Gyeonggi-do, KR;
Jae-kwang Choi, Gyeonggi-do, KR;
Hyung-Suk Jung, Gyeonggi-do, KR;
Jong-Ho Lee, Gyeonggi-do, KR;
Hwa-Sung Rhee, Gyeonggi-do, KR;
Jae-Kwang Choi, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Integrated circuit devices include a semiconductor substrate having a first doped region and a second doped region having a different doping type than the first doped region. A gate electrode structure on the semiconductor substrate extends between the first and second doped regions and has a gate insulation layer of a first high dielectric constant material in the first doped region and of a second high dielectric constant material, different from the first high dielectric constant material, in the second doped region. A gate electrode is on the gate insulation layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile