The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2009
Filed:
Jul. 17, 2007
Ho Jin Cho, Kyoungki-do, KR;
Cheol Hwan Park, Seoul, KR;
Jae Soo Kim, Kyoungki-do, KR;
Dong Kyun Lee, Seoul, KR;
Ho Jin Cho, Kyoungki-do, KR;
Cheol Hwan Park, Seoul, KR;
Jae Soo Kim, Kyoungki-do, KR;
Dong Kyun Lee, Seoul, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A capacitor is made by forming a buffer oxide layer, an etching stop layer, and a mold insulation layer over a semiconductor substrate having a storage node contact plug. The mold insulation layer and the etching stop layer are etched to form a hole in an upper portion of the storage node contact plug. A tapering layer is deposited over the mold insulation layer including the hole. The tapering layer and the buffer oxide layer are etched back so that the tapering layer is remained only at the upper end portion of the etched hole. A metal storage node layer formed on the etched hole over the remaining tapering layer. The mold insulation layer and the remaining tapering layer are removed to form a cylindrical storage node having a tapered upper end. A dielectric layer and a plate node are formed over the storage node.