The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2009

Filed:

Apr. 20, 2007
Applicants:

Harry Yue Gee, Sunnyvale, CA (US);

Umesh Sharma, Santa Clara, CA (US);

Inventors:

Harry Yue Gee, Sunnyvale, CA (US);

Umesh Sharma, Santa Clara, CA (US);

Assignee:

California Micro Devices, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01); H01L 31/111 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention describes ESD apparatus, methods of forming the same, and methods of providing ESD protection. In certain aspects, the invention achieves the desired turn-on voltage and maintains low leakage in the ESD apparatus, and the methods of providing ESD protection. In one aspect, a zener diode that has a positive trigger voltage is used to quickly turn-on a transistor. In another aspect, different zener diodes that have positive and negative trigger voltages, respectively, are used to quickly turn on a transistor. In still another aspect, a linearly graded P-region is used to implement the ESD device of the present invention.


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