The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2009
Filed:
Jun. 29, 2004
Hyeon Jin Shin, Gyeonggi-Do, KR;
Hyun Dam Jeong, Gyeonggi-Do, KR;
Jong Baek Seon, Gyeonggi-Do, KR;
Sang Kook Mah, Seoul, KR;
Jin Heong Yim, Gyeonggi-Do, KR;
Jae Jun Lee, Gyeonggi-Do, KR;
Kwang Hee Lee, Gyeonggi-Do, KR;
Jung Bae Kim, Gyeonggi-Do, KR;
Hyeon Jin Shin, Gyeonggi-Do, KR;
Hyun Dam Jeong, Gyeonggi-Do, KR;
Jong Baek Seon, Gyeonggi-Do, KR;
Sang Kook Mah, Seoul, KR;
Jin Heong Yim, Gyeonggi-Do, KR;
Jae Jun Lee, Gyeonggi-Do, KR;
Kwang Hee Lee, Gyeonggi-Do, KR;
Jung Bae Kim, Gyeonggi-Do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiOenhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.