The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2009
Filed:
Sep. 26, 2006
Tae Su Kim, Daejeon, KR;
Bu Gon Shin, Daejeon, KR;
Jae Sung You, Seoul, KR;
Hyun Woo Shin, Gwacheon-si, KR;
Tae Su Kim, Daejeon, KR;
Bu Gon Shin, Daejeon, KR;
Jae Sung You, Seoul, KR;
Hyun Woo Shin, Gwacheon-si, KR;
LG Chem Ltd., Seoul, KR;
Abstract
Disclosed is a method for manufacturing an optoelectronic semiconductor device having a p-n junction diode, which includes the steps of: (a) etching at least one surface of the p-n junction diode in a depth direction to form a plurality of continuous, isolated or mixed type electrode pattern grooves with a certain array; and (b) filling the formed grooves with a conductive ink containing a transparent conducting particle through an inkjet and then performing heat treatment to form a buried transparent electrode, the optoelectronic semiconductor device, and an apparatus for manufacturing the optoelectronic semiconductor device. In the present invention, covering loss is significantly reduced due to a buried transparent electrode so that the high efficiency of photoelectric conversion can be implemented, and there can be provided the easiness of a manufacturing process and the enhancement of productivity through the unification of etching and electrode forming processes.