The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2009
Filed:
Jun. 15, 2006
Applicant:
Sung-kwon Lee, Kyoungki-do, KR;
Inventor:
Sung-Kwon Lee, Kyoungki-do, KR;
Assignee:
Hynix Semiconductor Inc., Kyoungki-Do, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a contact hole of a semiconductor is provided. Conductive patterns are formed over a substrate. An insulation layer is formed over the substrate to bury the conductive patterns. A hard mask including an amorphous carbon layer and an oxide based layer are formed in sequential order over the insulation layer and the conductive pattern. The amorphous carbon layer and the oxide layer are selectively etched to form a mask pattern. The insulation layer is etched using the mask pattern as a mask to form a contact hole.