The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2009
Filed:
Aug. 13, 2007
Sun Woon Kim, Seoul, KR;
Seong Ju Park, Gwangju, KR;
Ja Yeon Kim, Jeollabuk-do, KR;
Min Ki Kwon, Jeollabuk-do, KR;
Dong Ju Lee, Suwon, KR;
Jae Ho Han, Daejeon, KR;
Sun Woon Kim, Seoul, KR;
Seong Ju Park, Gwangju, KR;
Ja Yeon Kim, Jeollabuk-do, KR;
Min Ki Kwon, Jeollabuk-do, KR;
Dong Ju Lee, Suwon, KR;
Jae Ho Han, Daejeon, KR;
Samsung Electro-Mechanics Co., Ltd., Gyunggi-Do, KR;
Abstract
Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer; heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed; removing the Pd/Zn alloy layer formed on the p-type nitride semiconductor layer; mesa-etching portions of the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.