The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2009

Filed:

Jul. 31, 2008
Applicants:

Takamitsu Higuchi, Matsumoto, JP;

Taku Aoyama, Setagaya, JP;

Inventors:

Takamitsu Higuchi, Matsumoto, JP;

Taku Aoyama, Setagaya, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 41/083 (2006.01); H01L 41/00 (2006.01); B32B 15/04 (2006.01); B32B 9/00 (2006.01); B05D 5/12 (2006.01); C23F 1/00 (2006.01); C30B 29/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a potassium niobate deposited body includes: forming a buffer layer above a substrate composed of an R-plane sapphire substrate; forming above the buffer layer a potassium niobate layer or a potassium niobate solid solution layer that epitaxially grows in a (100) orientation in a pseudo cubic system expression; and forming an electrode layer above the potassium niobate layer or the potassium niobate solid solution layer, wherein a (100) plane of the potassium niobate layer or the potassium niobate solid solution layer is formed to tilt with a [11-20] direction vector as a rotation axis with respect to an R-plane (1-102) of the R-plane sapphire substrate.


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