The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2009
Filed:
Dec. 22, 2005
Yun-ki Byeun, Seoul, KR;
Kyong Sop Han, Seoul, KR;
Han Kyu Seong, Seoul, KR;
Heon Jin Choi, Seoul, KR;
Sung Churl Choi, Seoul, KR;
Yun-Ki Byeun, Seoul, KR;
Kyong Sop Han, Seoul, KR;
Han Kyu Seong, Seoul, KR;
Heon Jin Choi, Seoul, KR;
Sung Churl Choi, Seoul, KR;
Korea Institute of Science and Technology, Seoul, KR;
Abstract
The present invention relates to a fabrication method of gallium manganese nitride (GaMnN) single crystal nanowire, more particularly to a fabrication method of GaMnN single crystal nanowire substrate by halide vapor phase epitaxy (HVPE) in which such metal components as gallium (Ga) and manganese (Mn) react with such gas components as nitrogen (N), hydrogen chloride (HCl) and ammonia (NH), wherein the amount of the gas components are adjusted to control the Mn doping concentration in order to obtain nanowire having a perfect, one-dimensional, single crystal structure without internal defect, concentration of holes, or carriers, and magnetization value of which being determined by the doping concentration and showing ferromagnetism at room temperature, thus being a useful spin transporter in the field of the next-generation spintronics, such as spin-polarized LED, spin-polarized FET, etc.