The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2009
Filed:
Jan. 09, 2002
Michael Renne Ty Tan, Menlo Park, CA (US);
Chao Kun Lin, Fremont, CA (US);
Scott W. Corzine, Sunnyvale, CA (US);
Jintian Zhu, Palo Alto, CA (US);
Michael H. Leary, Fremont, CA (US);
Michael Renne Ty Tan, Menlo Park, CA (US);
Chao Kun Lin, Fremont, CA (US);
Scott W. Corzine, Sunnyvale, CA (US);
Jintian Zhu, Palo Alto, CA (US);
Michael H. Leary, Fremont, CA (US);
Avago Technologies General IP (Singapore) Pte. Ltd., Singapore, SG;
Abstract
A vertical-cavity surface-emitting laser incorporating a supported air gap distributed Bragg reflector is disclosed. The supported air gap DBR includes a regrowth layer of material that provides mechanical support for the original material layers. The supported air gap DBR is fabricated by first growing alternating pairs of a first material and a sacrificial material over a suitable substrate. The layer pairs of the first material and sacrificial material are covered by a suitable dielectric material. The dielectric material is then selectively removed exposing regions of the first material and sacrificial material where selective regrowth of additional material is desired. The selective regrowth of the additional material provides mechanical support for the semiconductor material that remains after a selective etch removal of the sacrificial material.