The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2009
Filed:
May. 15, 2007
Applicants:
David Bruce Young, Oakland, CA (US);
Yuk Lung Ha, San Jose, CA (US);
Ashish Verma, San Jose, CA (US);
Lars Eng, Los Altos, CA (US);
Inventors:
David Bruce Young, Oakland, CA (US);
Yuk Lung Ha, San Jose, CA (US);
Ashish Verma, San Jose, CA (US);
Lars Eng, Los Altos, CA (US);
Assignee:
Finisar Corporation, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Semiconductor lasers having a doped active region. In one example embodiment, a laser includes a substrate and a doped active region positioned above the substrate. The doped active region includes a plurality of quantum wells separated by a plurality of barrier layers. The quantum wells and the barrier layers are doped with a doping material with a concentration between about 1*10^16/cm3 to about 1*10^17/cm3.