The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2009
Filed:
Oct. 17, 2006
Natsuo Ajika, Hyogo, JP;
Shoji Shukuri, Hyogo, JP;
Masaaki Mihara, Hyogo, JP;
Moriyoshi Nakashima, Hyogo, JP;
Natsuo Ajika, Hyogo, JP;
Shoji Shukuri, Hyogo, JP;
Masaaki Mihara, Hyogo, JP;
Moriyoshi Nakashima, Hyogo, JP;
Genusion, Inc., Hyogo, JP;
Abstract
A hot electron (BBHE) is generated close to a drain by tunneling between bands, and bit data writing is performed by injecting the hot electron into a charge storage layer. When Vg is a gate voltage, Vsub is a cell well voltage, Vs is a source voltage and Vd is a drain voltage, a relation of Vg>Vsub>Vs>Vd is satisfied, Vg−Vd is a value of a potential difference required for generating a tunnel current between the bands or higher, and Vsub−Vd is substantially equivalent to a barrier potential of the tunnel insulating film or higher.