The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7573552 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 11, 2009

Filed:

Oct. 26, 2007
Applicants:

Yoon-seok Choi, Suwon-si, KR;

Young-jin Chang, Yongin-si, KR;

Jae-beom Choi, Suwon-si, KR;

Seung-hwan Shim, Seongnam-si, KR;

Han-na JO, Cheongju-si, KR;

Inventors:

Yoon-Seok Choi, Suwon-si, KR;

Young-Jin Chang, Yongin-si, KR;

Jae-Beom Choi, Suwon-si, KR;

Seung-Hwan Shim, Seongnam-si, KR;

Han-Na Jo, Cheongju-si, KR;

Assignee:

Samsung Electronics, Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/1335 (2006.01);
U.S. Cl.
CPC ...
Abstract

A transflective liquid crystal display device has improved light efficiency. A method of fabricating a transflective liquid crystal display device including a thin film transistor substrate having a transmissive region and a reflective region, includes forming a retardation layer on a lower surface of the thin film transistor substrate, aligning a mask having a reflective region pattern on the lower surface of the thin film transistor substrate, and forming a light efficiency enhancer by selectively removing the retardation layer by irradiating a laser onto the lower surface of the thin film transistor substrate through the mask.


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