The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2009

Filed:

Sep. 19, 2007
Applicants:

Dong-myung Eun, Gyeonggi-do, KR;

Jung-hwa Lee, Gyeonggi-do, KR;

Inventors:

Dong-Myung Eun, Gyeonggi-do, KR;

Jung-Hwa Lee, Gyeonggi-do, KR;

Assignee:

Samsung Electronic Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/10 (2006.01); H03K 3/01 (2006.01);
U.S. Cl.
CPC ...
Abstract

A high voltage generator is provided. The high voltage generator may comprise a high voltage output node, a plurality of pumping stages, a plurality of charge transfer elements, and a field relieving unit. The plurality of pumping stages sequentially pump charges in response to a sequentially enabled plurality of pump signals and output the pumped charges, respectively. The plurality of charge transfer elements sequentially transfer the charges sequentially pumped by the plurality of pumping stages to the next pumping stage and transfer the charge of an output node of the last pumping stage to the high voltage output node. The field relieving unit reduces the voltage of the input terminal of at least one of the plurality of charge transfer elements. The high voltage generator reduces hot carrier injection in charge transfer transistors without decreasing pumping efficiency.


Find Patent Forward Citations

Loading…