The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2009
Filed:
Jul. 09, 2007
Young-soo Park, Gyeonggi-do, KR;
Kyoo-chul Cho, Gyeonggi-do, KR;
Hee-sung Kim, Seoul, KR;
Tae-soo Kang, Gyeonggi-do, KR;
Sam-jong Choi, Gyeonggi-do, KR;
Young-Soo Park, Gyeonggi-do, KR;
Kyoo-Chul Cho, Gyeonggi-do, KR;
Hee-Sung Kim, Seoul, KR;
Tae-Soo Kang, Gyeonggi-do, KR;
Sam-Jong Choi, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
Provided are a semiconductor device, and a method of forming the same. In one embodiment, the semiconductor device includes a semiconductor layer, first and second semiconductor fins, an insulating layer, and an inter-fin connection member. The first and second semiconductor fins are placed on the semiconductor layer, and have different crystal directions. The first semiconductor fin is connected to the semiconductor layer, and has the equivalent crystal direction as that of the semiconductor layer. The insulating layer is interposed between the second semiconductor fin and the semiconductor layer, and has an opening in which the first semiconductor fin is inserted. The inter-fin connection member connects the first semiconductor fin and the second semiconductor fin together on the insulating layer.