The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2009
Filed:
Jul. 12, 2007
Keiichi Kushida, Yokohama, JP;
Keiichi Kushida, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A programming method of a MOS electric fuse including preparing, as a fuse element, a MOS transistor which has a first impurity region and a second impurity region, both of a second conductivity type, formed to face with each other on an upper surface of a well of a first conductivity type on a semiconductor substrate, a gate dielectric film formed on the upper surface of the well at least between the first impurity region and the second impurity region, and a gate electrode formed through the gate dielectric film on the upper surface of the well held between the first impurity region and the second impurity region, and applying a first voltage to the gate electrode, and a second voltage different from the first voltage to the first impurity region, and short-circuiting the gate dielectric film only between the gate electrode and the first impurity region.