The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2009
Filed:
Sep. 28, 2006
Shinji Kunori, Saitama, JP;
Hiroaki Shishido, Saitama, JP;
Masato Mikawa, Saitama, JP;
Kosuke Ohshima, Saitama, JP;
Masahiro Kuriyama, Saitama, JP;
Mizue Kitada, Saitama, JP;
Shinji Kunori, Saitama, JP;
Hiroaki Shishido, Saitama, JP;
Masato Mikawa, Saitama, JP;
Kosuke Ohshima, Saitama, JP;
Masahiro Kuriyama, Saitama, JP;
Mizue Kitada, Saitama, JP;
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
Abstract
A semiconductor device having high withstand strength against destruction. The semiconductor deviceincludes guard buried regionsof second conductivity type concentrically provided on a resistance layerof first conductivity type and base diffusion regionsare provided inside of the guard buried regionand base buried regionsof the second conductivity type are provided on the bottom surface of the base diffusion regions. A distance between adjacent base buried regionsat the bottom of the same base diffusion regionis Wm, a distance between adjacent base buried regionsat the bottom of the different base diffusion regionsis Wm, and a distance between the guard buried regionsis W. A ratio of an impurity quantity Qof the first conductivity type and an impurity quantity Qof the second conductivity type included inside the widthwise center of the innermost guard buried regionis 0.90<Q/Qwhen Wm<W<Wm. When W<Wm<Wm, the ratio is Q/Q<0.92 and when Wm<Wm<W, the ratio is 1.10<Q/Q.