The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2009
Filed:
Nov. 29, 2004
Ryuji Ohba, Kawasaki, JP;
Shinobu Fujita, Kawasaki, JP;
Ryuji Ohba, Kawasaki, JP;
Shinobu Fujita, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
Random number generating element comprises source region, drain region, semiconductor channel provided between source region and drain region and having portion of width W and length L, width W and length L satisfying W≦(π/10(μm))/L, tunnel insulation film provided on semiconductor channel, and conductive fine particle group containing conductive fine particles provided on tunnel insulation film with surface density not less than 2.5×10cm, charge and discharge of electrons generating between conductive fine particles and semiconductor channel via tunnel insulation film, wherein following inequalities are satisfied:(Tox=0.8 nm)]×exp[0.3 nm×(0.8 nm/)×(4π(2×3.1 eV))],(q/4π∈)≦26eV,[/()]×[(Tox=0.8 nm)](μm)where Drepresents surface density, d average diameter, T thickness, Rtunnel resistance per unit area, R(Tox=0.8 nm) tunnel resistance, per unit area, of tunnel oxide film with thickness of 0.8 nm, h Plank's constant, q elemental charge, m effective mass, and ∈ dielectric constant.