The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2009

Filed:

Sep. 21, 2007
Applicants:

Kyoung Hoon Yang, Daejon, KR;

Ha Joon Lee, Daejon, KR;

Inventors:

Kyoung Hoon Yang, Daejon, KR;

Ha Joon Lee, Daejon, KR;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 40/14 (2006.01); H01L 27/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed herein is an active pixel sensor having a first transistor amplifying voltage generated in response to light at an integration node; a second transistor selects a specific pixel from a pixel array; a third transistor resets voltage of the integration node to voltage supplied from VDD during a reset period; a fourth transistor connects a photogate capacitance to the integration node increasing a dynamic range when the voltage of the integration node is VDD-Vth; a fifth transistor generates a signal voltage in a logarithmic response to light when the voltage of the integration node is logarithmic bias voltage-Vth; and a photodiode to convert photons into electron pairs in a depletion layer, causing signal charges to be accumulated when light is incident from outside.


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