The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2009
Filed:
May. 25, 2006
Applicant:
Young OK Hong, Icheon-si, KR;
Inventor:
Young Ok Hong, Icheon-si, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L 21/32 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing flash memory devices wherein, after gate lines are formed, an HDP oxide film having at least the same height as that of a floating gate is formed between the gate lines. Spacers are formed between the remaining spaces using a nitride film. Accordingly, the capacitance between the floating gates can be lowered. After an ion implantation process is performed, spacers can be removed. It is therefore possible to secure contact margin of the device.