The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2009

Filed:

Aug. 04, 2006
Applicants:

F. Scott Johnson, Richardson, TX (US);

Tad Grider, McKinney, TX (US);

Benjamin P. Mckee, Richardson, TX (US);

Inventors:

F. Scott Johnson, Richardson, TX (US);

Tad Grider, McKinney, TX (US);

Benjamin P. McKee, Richardson, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/336 (2006.01); H01L 21/8234 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods are disclosed for semiconductor device fabrication in which dopants are selectively implanted into transistor gate structures to counteract or compensate for dopant depletion during subsequent fabrication processing. A patterned implant mask is formed over a semiconductor device, which exposes at least a portion of the gate structure and covers the remaining upper surfaces of the device. Thereafter, dopants are selectively implanted in to the exposed gate structure.


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