The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2009
Filed:
Jun. 20, 2005
Eui-hoon Hwang, Suwon-si, KR;
Eui-Hoon Hwang, Suwon-si, KR;
Samsung Mobile Display Co., Ltd., Yongin, Gyunggi-Do, KR;
Abstract
A method of fabricating a CMOS thin film transistor (TFT) and a CMOS TFT fabricated using the method involve provision of a substrate having a first region and a second region. A first semiconductor layer and a second semiconductor layer are formed on the first and second regions, respectively. A gate insulating layer having a first portion overlying end portions of the first semiconductor layer, and a second portion overlying end portions of the second semiconductor layer and having a thickness larger than that of the first portion, is formed on the semiconductor layers. An ion doping mask pattern is formed on the gate insulating layer. First impurities are doped in end portions of the first semiconductor layer using the ion doping mask pattern as a mask, and second impurities having a conductivity type different from that of the first impurities are doped in end portions of the second semiconductor layer. As a result, it is possible to reduce the number of masks, and to simplify the processes required for manufacture of the CMOS TFT.