The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2009
Filed:
Oct. 21, 2005
Arindom Datta, Madison, WI (US);
Xiaochun LI, Madison, WI (US);
Hongseok Choi, Madison, WI (US);
Wisconsin Alumni Research Foundation, Madison, WI (US);
Abstract
Fabricating a microelectronics grade metal substrate comprises forming the metal substrate on a sacrificial substrate. An adhesion layer can be deposited on or over the surface of the sacrificial substrate. A seed layer of the metal can be deposited on or over the adhesion layer. The metal material can be deposited on the seed layer by electroplating or other low-temperature, low-stress process to form a microelectronics-grade metal substrate. Thin film sensors and/or other microelectronic devices, followed by appropriate insulating layer(s), may be fabricated on or over the sacrificial substrate before forming the metal substrate. The sacrificial silicon substrate can then be etched away, leaving the microelectronics-grade metal substrate, and possibly the microelectronics device. Another insulating layer(s), followed by another adhesion layer, another seed layer and additional amounts of the material forming the metal substrate can then be deposited over the now-exposed microelectronics device to encapsulate it within a metal shell.