The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2009
Filed:
Sep. 08, 2005
Hubert Benzel, Pliezhausen, DE;
Stefan Finkbeiner, Gomaringen, DE;
Matthias Illing, Kusterdingen, DE;
Frank Schaefer, Tuebingen, DE;
Simon Armbruster, Gomaringen, DE;
Gerhard Lammel, Tuebingen, DE;
Christoph Schelling, Reutlingen, DE;
Joerg Brasas, Walddorfhaeslach, DE;
Hubert Benzel, Pliezhausen, DE;
Stefan Finkbeiner, Gomaringen, DE;
Matthias Illing, Kusterdingen, DE;
Frank Schaefer, Tuebingen, DE;
Simon Armbruster, Gomaringen, DE;
Gerhard Lammel, Tuebingen, DE;
Christoph Schelling, Reutlingen, DE;
Joerg Brasas, Walddorfhaeslach, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
Described is a method for manufacturing a micromechanical sensor element and a micromechanical sensor element manufactured in particular using such a method which has a hollow space or a cavity and a membrane for detecting a physical variable. Different method steps are performed for manufacturing the sensor element, among other things, a structured etch mask having a plurality of holes or apertures being applied on a semiconductor substrate. Moreover, an etch process is used to create depressions in the semiconductor substrate beneath the holes in the structured etch mask. Anodization of the semiconductor material is subsequently carried out, the anodization taking place preferably starting from the created depressions in the semiconductor substrate. Due to this process, porous areas are created beneath the depressions, a lattice-like structure made of untreated, i.e., non-anodized, substrate material remaining between the porous areas and the depressions. This lattice-like structure extends preferably from the surface of the semiconductor into the depth. The etch mask for creating the depressions may be removed, optionally prior to or subsequent to the anodization. A temperature treatment is carried out for creating the hollow space and the membrane in the semiconductor substrate which forms the sensor element. During this process, the hollow space is created from the at least one area that has been rendered porous beneath a depression and the membrane above the hollow space is created from the lattice-like structure by rearranging the semiconductor material.