The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7572428 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 11, 2009

Filed:

Sep. 22, 2005
Applicants:

Masakazu Oka, Kasasaki, JP;

Tomoyuki Fukuyo, Kasasaki, JP;

Junichi Torisu, Kasasaki, JP;

Inventors:

Masakazu Oka, Kasasaki, JP;

Tomoyuki Fukuyo, Kasasaki, JP;

Junichi Torisu, Kasasaki, JP;

Assignee:

Showa Denko K.K., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 7/20 (2006.01); C01B 9/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

A process for producing a fluorine gas of the invention comprises a step (1) of generating a fluorine gas by sectioning the interior of a fluorine gas generation container equipped with a heating means, by the use of a structure having gas permeability, then filling each section with a high-valence metal fluoride and heating the high-valence metal fluoride. The process may comprise a step (2) of allowing the high-valence metal fluoride, from which a fluorine gas has been generated in the step (1), to occlude a fluorine gas. According to the process of the invention, a high-purity fluorine gas that is employable as an etching gas or a cleaning gas in the process for manufacturing semiconductors or liquid crystals can be produced inexpensively on a mass scale.


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