The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2009

Filed:

Jan. 10, 2005
Applicants:

Rongping Wang, Cupertino, CA (US);

Canfeng Lai, Fremont, CA (US);

Yuri Trachuk, San Jose, CA (US);

Siamak Salimian, Sunnyvale, CA (US);

Inventors:

Rongping Wang, Cupertino, CA (US);

Canfeng Lai, Fremont, CA (US);

Yuri Trachuk, San Jose, CA (US);

Siamak Salimian, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23C 14/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system forms a plasma having a density greater than 10ions/cmwithin the process chamber. A radio-frequency bias system generates an electrical bias on the substrate at a frequency less than 5 MHz. A controller controls the gas-delivery system, the pressure-control system, the high-density plasma generating system, and the radio-frequency bias system.


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