The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2009
Filed:
Nov. 03, 2006
Applicants:
Chang Moon Lim, Seoul, KR;
Jun Taek Park, Seoul, KR;
Inventors:
Chang Moon Lim, Seoul, KR;
Jun Taek Park, Seoul, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
Abstract
A lithography method has a simulation method for mathematically approximating a photoresist film pattern with a Diffused Aerial Image Model ('DAIM') for semiconductor device fabrication. The DAIM is applied with at least two acids having heterogeneous diffusion characteristics.
Quick Actions:
Lim, Chang. (2009). Diffused aerial image model semiconductor device fabrication (U.S. Patent No. 7571424). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7571424
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