The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2009
Filed:
Apr. 29, 2004
Johann Peter Reithmaier, Schauenburg, DE;
Lars Bach, Ullersdorf, DE;
Wolfgang Kaiser, Burgebrach, DE;
Johann Peter Reithmaier, Schauenburg, DE;
Lars Bach, Ullersdorf, DE;
Wolfgang Kaiser, Burgebrach, DE;
Nanoplus Nanosystems and Technologies GmbH, Gerbrunn, DE;
Abstract
Disclosed is a semiconductor laser () in which the substrate () comprises at least three independent functional sections () in the direction of light wave propagation (A), said functional sections () serving different functions and being individually triggered by means of electrodes () via electrode leads (). An intensification zone (), a grid zone (), and a phase adjustment zone () are provided as functional sections. The light wave is optically intensified in the intensification zone () while the phase of the advancing and returning wave is adjusted in the phase adjustment zone (). The grid zone () is used for selecting the wavelength and adjusting the intensity of coupling between the intensification zone () and the phase adjustment zone ().