The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2009

Filed:

Jan. 19, 2007
Applicants:

Katsumi Ishikawa, Hitachinaka, JP;

Yutaka Sato, Hitachiota, JP;

Masahiro Nagasu, Hitachinaka, JP;

Seiji Ishida, Hitachinaka, JP;

Inventors:

Katsumi Ishikawa, Hitachinaka, JP;

Yutaka Sato, Hitachiota, JP;

Masahiro Nagasu, Hitachinaka, JP;

Seiji Ishida, Hitachinaka, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A gate driver circuit of a voltage drive type power semiconductor switching device capable of speeding up di/dt and dv/dt even during large-current driving to thereby reduce the switching loss is disclosed. This power semiconductor switching device gate driving circuit includes a drive circuit which applies a drive signal to the gate electrode of the power semiconductor switching device and a measurement unit for measuring a flow current of the power semiconductor switching device. Based on a detected value of the flow current of the power semiconductor switching device, the gate is made variable in mirror voltage thereof.


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