The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2009
Filed:
Mar. 14, 2007
Takashi Suzuki, Aichi-ken, JP;
Sachiko Tanaka, Aichi-ken, JP;
Masayasu Ishiko, Aichi-ken, JP;
Jun Saito, Aichi-ken, JP;
Tsuyoshi Nishiwaki, Aichi-ken, JP;
Yukihiro Hisanaga, Aichi-ken, JP;
Hidehiro Nakagawa, Aichi-ken, JP;
Hirokazu Saito, Aichi-ken, JP;
Takashi Suzuki, Aichi-ken, JP;
Sachiko Tanaka, Aichi-ken, JP;
Masayasu Ishiko, Aichi-ken, JP;
Jun Saito, Aichi-ken, JP;
Tsuyoshi Nishiwaki, Aichi-ken, JP;
Yukihiro Hisanaga, Aichi-ken, JP;
Hidehiro Nakagawa, Aichi-ken, JP;
Hirokazu Saito, Aichi-ken, JP;
Kabushiki Kaisha Toyota Chuo Kenkyusho, Aichi-gun, Aichi-ken, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Abstract
A semiconductor device having a substrate; an emitter electrode or source electrode formed on the top surface side of the substrate; a gate electrode formed on the top surface side of the substrate; and a collector electrode or drain electrode formed on the bottom surface side of the substrate. The device includes an insulating region formed so as to surround a device-forming region provided on the top surface side of the substrate; and a drift region of the device-forming region, the drift region being in contact with the insulating region, is formed of a semiconductor layer having the same conduction type as that of a channel formed through application of an electric potential to the gate electrode. The gate electrode is a trench gate. An outer peripheral portion of the emitter electrode or source electrode extends in a width of 20 μm or more over the top surface of the insulating region. The insulating region includes, in its interior, a dielectric region having a relative dielectric constant lower than that of the insulating region.