The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2009
Filed:
Dec. 20, 2005
Rajesh D. Rajavel, Oak Park, CA (US);
David H. Chow, Newbury Park, CA (US);
Tahir Hussain, Calabasas, CA (US);
Yakov Royter, Santa Monica, CA (US);
Rajesh D. Rajavel, Oak Park, CA (US);
David H. Chow, Newbury Park, CA (US);
Tahir Hussain, Calabasas, CA (US);
Yakov Royter, Santa Monica, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
Bipolar junction transistors (BJTs) and single or double heterojunction bipolar transistors with low parasitics, and methods for making the same is presented. A transistor is fabricated such that the collector region underneath a base contact area is deactivated. This results in a drastic reduction of the base-collector parasitic capacitance, C. An embodiment of the present invention provides a transistor architecture for which the base contact area can be decoupled from the collector and hence allows for dramatic reduction in the parasitics of transistors.