The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2009
Filed:
Jul. 15, 2005
Applicants:
Masataka Yanagihara, Niiza, JP;
Masahiro Sato, Niiza, JP;
Tetsuji Moku, Niiza, JP;
Inventors:
Assignee:
Sanken Electric Co., Ltd., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/072 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device having nitride semiconductor layers has a buffer layer () in the form of alternations of a first sublayer () of AlN and a second layer () of GaN with interposition of a third layer () of p-type GaN therebetween. On this buffer layer there is grown a main semiconductor region () having nitride semiconductor layers for providing a high-electron-mobility transistor or the like. From 0.5 to 50.0 nanometers thick, the third sublayers () of the buffer layer restrict the generation of two-dimensional electron gas and so prevent the buffer layer from becoming unnecessarily low in resistance.