The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2009
Filed:
Sep. 11, 2006
Takatoshi Tsujimura, Kanagawa, JP;
Shinya Ono, Kanagawa, JP;
Mitsuo Morooka, Kanagawa, JP;
Koichi Miwa, Kanagawa, JP;
Takatoshi Tsujimura, Kanagawa, JP;
Shinya Ono, Kanagawa, JP;
Mitsuo Morooka, Kanagawa, JP;
Koichi Miwa, Kanagawa, JP;
Kyocera Corporation, Kyoto-Shi, JP;
Abstract
A thin film transistor according to the present invention includes a gate electrode, a semiconductor layer having a channel forming region arranged on the gate electrode and an impurity region arranged on a part of the channel forming region, source and drain electrodes electrically connected to the impurity region, and a gate insulating film that electrically insulates the gate electrode and the semiconductor layer, wherein the distance between the upper end of the gate electrode and the upper end of the impurity region is larger than the distance between the upper end of the gate electrode and the upper end of the channel forming region.