The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2009
Filed:
May. 08, 2006
Applicants:
Chel-jong Choi, Osan-si, KR;
Jong-bong Park, Osan-si, KR;
Tae-gyu Kim, Hwaseong-si, KR;
Dong-woo Lee, Seoul, KR;
Inventors:
Chel-jong Choi, Osan-si, KR;
Jong-bong Park, Osan-si, KR;
Tae-gyu Kim, Hwaseong-si, KR;
Dong-woo Lee, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A phase-change random access memory (PRAM) device including a plurality of nanowires and a method of manufacturing the same include: a lower structure including a plurality of contact plugs; the nanowires extending into the contact plugs from surfaces defining a respective terminal end of the contact plugs; and a phase-change layer formed on top of the nanowires. Therefore, a reset or a set current consumed by the PRAM device is significantly reduced.