The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2009
Filed:
Nov. 10, 2005
Yaoling Pan, Union City, CA (US);
David P. Stumbo, Belmont, CA (US);
Yaoling Pan, Union City, CA (US);
David P. Stumbo, Belmont, CA (US);
Nanosys, Inc., Palo Alto, CA (US);
Abstract
Embodiments of the present invention are provided for improved contact doping and annealing systems and processes. In embodiments, a plasma ion immersion implantation (PIII) process is used for contact doping of nanowires and other nanoelement based thin film devices. According to further embodiments of the present invention, pulsed laser annealing using laser energy at relatively low laser fluences below about 100 mJ/cm(e.g., less than about 50 mJ/cm, e.g., between about 2 and 18 mJ/cm) is used to anneal nanowire and other nanoelement-based devices on substrates, such as low temperature flexible substrates, e.g., plastic substrates.