The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2009
Filed:
Apr. 03, 2007
Hiroki Nakamura, Handa, JP;
Yoshihiro Miyoshi, Tajimi, JP;
Eiichi Okuno, Mizuho, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A method for manufacturing a SiC semiconductor device includes: forming an impurity layer in a SiC layer; and forming an oxide film on the SiC layer. The forming the impurity layer includes: implanting an impurity ion in the SiC layer; forming a carbon layer on the SiC layer; heating the SiC layer for activating the implanted impurity in the SiC layer covered with the carbon layer; and removing the carbon layer from the SiC layer. The forming the carbon layer includes: coating a resist on the SiC layer; and heating the resist for evaporating organic matter in the resist so that the resist is carbonized. The forming the oxide film is performed after the removing the carbon layer.