The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7569481 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 04, 2009

Filed:

May. 30, 2006
Applicant:

Sang Woo Nam, Cheongju-si, KR;

Inventor:

Sang Woo Nam, Cheongju-si, KR;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is a method for forming a via-hole for interconnection of metallization and/or metal wires in a semiconductor device. The present method may include the steps of: (a) forming an insulating layer on a semiconductor substrate including a lower metallization and/or metal wiring; (b) forming a mask (e.g., a photo-resist pattern) on the insulating layer; (c) dry etching the insulating layer using the photo-resist pattern as a mask to form a via-hole in the insulating layer; and (d) in the same dry etching chamber, etching a top portion of the insulating layer in the vicinity of the via-hole with an etchant comprising oxygen and argon.


Find Patent Forward Citations

Nam, Sang. (2009). Method for forming via-hole in semiconductor device (U.S. Patent No. 7569481). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7569481

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