The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2009
Filed:
Feb. 12, 2007
Applicants:
Bohumil Lojek, Colorado Springs, CO (US);
Michael D. Whiteman, Woodland Park, CO (US);
Inventors:
Bohumil Lojek, Colorado Springs, CO (US);
Michael D. Whiteman, Woodland Park, CO (US);
Assignee:
Atmel Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 23/552 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of non-thermal annealing of a silicon wafer comprising irradiating a doped silicon wafer with electromagnetic radiation in a wavelength or frequency range coinciding with lattice phonon frequencies of the doped semiconductor material. The wafer is annealed in an apparatus including a cavity and a radiation source of a wavelength ranging from 10-25 μm and more particularly 15-18 μm, or a frequency ranging from 12-30 THz and more particularly 16.5-20 THz.