The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2009
Filed:
Apr. 27, 2007
Takayuki Kamiya, Iwata, JP;
Kunihiko Mitsuoka, Shizuoka-Ken, JP;
Takayuki Kamiya, Iwata, JP;
Kunihiko Mitsuoka, Shizuoka-Ken, JP;
Yamaha Corporation, Shizuoka-Ken, JP;
Abstract
A method of manufacturing a CMOS-BJT semiconductor device comprises the steps of: forming a collector region of a first conductivity type and a first well of the first conductivity type, simultaneously in a semiconductor substrate; forming a second well of a second conductivity type opposite to said first conductivity type, in the semiconductor substrate; forming a base region of the second conductivity type in the collector region; forming first and second insulated gate structure on said first and second wells, and a junction protection structure having same constituent elements as said insulated gate structures on said base region; and forming second source/drain regions of the first conductivity type in said second well, and an emitter region of the first conductivity type in the base region, simultaneously, with an emitter-base junction reaching the principal surface below said junction protection structure.