The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2009
Filed:
Jan. 21, 2005
Applicants:
John M. Shannon, Whyteleafe, GB;
Carl Glasse, Redhill, GB;
Stanley D. Brotherton, Forest Row, GB;
Inventors:
Assignee:
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of making a source-gated transistor is described, in which a gate () is provided on substrate () followed by gate insulator () and semiconductor layer (). The layer is patterned to align the source with the gate () using photoresist () and back illumination through the substrate () with the gate () acting as a mask. The distance between source and drain may also be self-aligned using a spacer technique.