The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2009

Filed:

Jan. 05, 2007
Applicants:

Benoit Godard, Aix en Provence, FR;

Olivier Ginez, Peynier, FR;

Jean Michel Daga, Peynier, FR;

Inventors:

Benoit Godard, Aix en Provence, FR;

Olivier Ginez, Peynier, FR;

Jean Michel Daga, Peynier, FR;

Assignee:

Atmel Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 15/00 (2006.01); G11C 11/34 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method and system for providing a content addressable memory cell (CAM) as well as the CAM are disclosed. In one aspect, the method and system include providing a plurality of memory cells, at least one search line and at least one match line. Each of the CAM cells includes a FLOating gate Tunnel OXide (FLOTOX) element. The FLOTOX element includes a single floating gate transistor and a high voltage select transistor and can store at least a portion of a data word. Each CAM cell also preferably includes at least one low voltage transistor capable of comparing the portion of data word stored in the FLOTOX element with the portion of searched word. The search line(s) provide search word(s). The comparator(s) are connected with the search line(s) and the memory cells. The comparator(s) compare the data word stored by the portion of the plurality of memory cells and the search word. The match line(s) indicate whether the search word matches the data word stored by the portion of the plurality of memory cells.


Find Patent Forward Citations

Loading…