The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2009
Filed:
Jul. 20, 2006
Kazuyoshi Ueno, Kanagawa, JP;
Kazuyoshi Ueno, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
The method of manufacturing a semiconductor device according to the present invention includes: forming an interconnect trench in an insulating film formed on a semiconductor substrate (S); forming a barrier metal layer on the whole surface of the insulating film (S); forming a copper layer on the whole surface of the barrier metal layer so that the copper layer is embedded in the interconnect trench (S); removing the copper layer outside the interconnect trench by polishing under a condition that the barrier metal layer is left on the surface of the insulating film (S); selectively forming a cap metal layer on the copper layer formed in the interconnect trench after the step of removing the copper layer by polishing (S); and flattening the cap metal layer by polishing (S).