The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2009
Filed:
Apr. 27, 2006
Applicant:
Manfred Ruehrig, Eckental, DE;
Inventor:
Manfred Ruehrig, Eckental, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
A magnetoresistive memory cell includes a tunnel barrier region between first and second electrode devices. The first electrode device includes a natural antiferromagnet region. A diffusion barrier region is formed in the first electrode device and serves as a chemical and/or physical transformation region of a surface region or interface region between the tunnel barrier region and the natural antiferromagnet region.
Ruehrig, Manfred. (2009). Magnetoresistive memory cell and process for producing the same (U.S. Patent No. 7566941). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7566941
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile