The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2009
Filed:
Feb. 23, 2006
Applicants:
Yifeng Wu, Goleta, CA (US);
Primit Parikh, Chapel Hill, NC (US);
Marcia Moore, Santa Barbara, CA (US);
Inventors:
Yifeng Wu, Goleta, CA (US);
Primit Parikh, Chapel Hill, NC (US);
Marcia Moore, Santa Barbara, CA (US);
Assignee:
Cree, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/072 (2006.01); H01L 31/109 (2006.01);
U.S. Cl.
CPC ...
Abstract
Field effect transistors having a power density of greater than 5 W/mm when operated at a frequency of at least 30 GHz are provided. The power density of at least 5 W/mm may be provided at a drain voltage of 28 V. Transistors with a power density of at least 8 W/mm when operated at 40 GHz at a drain voltage of 28 V are also provided.