The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2009
Filed:
Sep. 08, 2005
Hyun-soo Kim, Yongin-si, KR;
Jae-hee Cho, Yongin-si, KR;
Hyun-soo Kim, Yongin-si, KR;
Jae-hee Cho, Yongin-si, KR;
Samsung Electro-Mechanics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A GaN-based compound semiconductor light emitting device is provided. The semiconductor light emitting device includes a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on a first region of the n-type semiconductor layer; a p-type semiconductor layer formed on the active layer; a p-type electrode formed on the p-type semiconductor layer; an n-type electrode formed on a second region separated from the first region of the n-type semiconductor layer; a dielectric layer formed on a sidewall of a stack comprising the p-type semiconductor layer, the active layer, and the n-type semiconductor layer; and a reflective layer formed on the dielectric layer.