The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2009
Filed:
Dec. 21, 2005
Michael L. Chabinyc, Burlingame, CA (US);
Rene a Lujan, Sunnyvale, CA (US);
Ana Claudia Arias, San Carlos, CA (US);
Jackson H. Ho, Palo Alto, CA (US);
Michael L. Chabinyc, Burlingame, CA (US);
Rene A Lujan, Sunnyvale, CA (US);
Ana Claudia Arias, San Carlos, CA (US);
Jackson H. Ho, Palo Alto, CA (US);
Palo Alto Research Center Incorporated, Palo Alto, CA (US);
Abstract
A backplane circuit includes an array of organic thin-film transistors (OTFTs), each OTFT including a source contact, a drain contact, and an organic semiconductor region extending between the source and drain contacts. The drain contacts in each row are connected to an address line. The source and drain contacts and the address lines are fabricated using a multi-layer structure including a relatively thick base portion formed of a relatively inexpensive metal (e.g., aluminum or copper), and a relatively thin contact layer formed of a high work function, low oxidation metal (e.g., gold) that exhibits good electrical contact to the organic semiconductor, is formed opposite at least one external surface of the base, and is located at least partially in an interface region where the organic semiconductor contacts an underlying dielectric layer.