The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2009
Filed:
Nov. 22, 2005
Eung-joon Lee, Gyeonggi-do, KR;
Hyun-young Kim, Seoul, KR;
In-sun Park, Gyeonggi-do, KR;
Hyun-deok Lee, Seoul, KR;
Eung-Joon Lee, Gyeonggi-do, KR;
Hyun-Young Kim, Seoul, KR;
In-Sun Park, Gyeonggi-do, KR;
Hyun-Deok Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device is formed by forming a gate region, including a gate oxide layer, and impurity diffusion regions on a semiconductor substrate, forming a barrier metal layer on the gate region and the impurity diffusion regions of the semiconductor substrate, forming a passivation layer at an interface between the semiconductor substrate and the gate oxide layer to remove defects of the gate oxide layer, and then performing a nitridation process to remove impurities from the semiconductor substrate.