The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2009
Filed:
Aug. 02, 2006
Xiaoming Yan, Sunnyvale, CA (US);
Brian Arbuckle, Danville, CA (US);
Evgeni Gousev, Saratoga, CA (US);
Ming-hau Tung, San Francisco, CA (US);
Xiaoming Yan, Sunnyvale, CA (US);
Brian Arbuckle, Danville, CA (US);
Evgeni Gousev, Saratoga, CA (US);
Ming-Hau Tung, San Francisco, CA (US);
QUALCOMM MEMS Technologies, Inc., San Diego, CA (US);
Abstract
A method for etching a target material in the presence of a structural material with improved selectivity uses a vapor phase etchant and a co-etchant. Embodiments of the method exhibit improved selectivities of from at least about 2-times to at least about 100-times compared with a similar etching process not using a co-etchant. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant. Embodiments of the method are particularly useful in the manufacture of MEMS devices, for example, interferometric modulators. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant, for example, molybdenum and the structural material comprises a dielectric, for example silicon dioxide.