The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2009
Filed:
Jun. 02, 2005
Applicant:
Ki Won Nam, Gyeonggi-do, KR;
Inventor:
Ki Won Nam, Gyeonggi-do, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a gate electrode of a semiconductor device is provided wherein a hard mask layer which is a nitride film is deposited and subjected to an additional surface deposition process so that a matrix structure of a nitride film surface becomes more compact to reduce an etching ratio of the hard mask layer thereby increasing a thickness of the residual hard mask layer.
Nam, Ki. (2009). Method for forming gate electrode of semiconductor device (U.S. Patent No. 7566644). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7566644
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile